2sd2098 / 2sd2118 / 2sd2097 transistors low v ce(sat) transistor (strobe flash) 2sd2098 / 2sd2118 / 2sd2097 ! ! ! ! features 1) low v ce(sat) . v ce(sat) = 0.25v (typ.) (i c /i b = 4a / 0.1a) 2) excellent dc current gain characteristics. 3) complements the 2sb1386 / 2sb1412 / 2sb1326. ! ! ! ! structure epitaxial planar type npn silicon transistor ! ! ! ! external dimensions (units : mm) (1) emitter (2) collector (3) base rohm : atv (1) base (2) collector (3) emitter rohm : cpt3 eiaj : sc-63 (1) base (2) collector (3) emitter rohm : mpt3 eiaj : sc-62 2sd2098 2sd2118 2sd2097 abbreviated symbol : ah ? ? 0.1 + 0.2 ? 0.1 + 0.2 + 0.3 ? 0.1 2.3 0.2 2.3 0.2 0.65 0.1 0.9 0.75 1.0 0.2 0.55 0.1 9.5 0.5 5.5 1.5 0.3 2.5 1.5 2.3 0.5 0.1 6.5 0.2 5.1 c0.5 (3) (2) (1) 0.9 ? 0.1 + 0.2 ? 0.05 + 0.1 ? 0.1 + 0.2 + 0.2 ? 0.1 (3) (2) (1) 4.0 0.3 1.0 0.2 0.5 0.1 2.5 3.0 0.2 1.5 0.1 1.5 0.1 0.4 0.1 0.5 0.1 0.4 0.1 0.4 1.5 4.5 1.6 0.1 1.0 6.8 0.2 2.5 0.2 1.05 0.45 0.1 2.54 2.54 0.5 0.1 0.9 4.4 0.2 14.5 0.5 (1) (2) (3) 0.65max. ? denotes h fe
2sd2098 / 2sd2118 / 2sd2097 transistors ! ! ! ! absolute maximum ratings (ta=25 c) parameter symbol limits unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 20 v emitter-base voltage v ebo 6v collector current i c 5 a(dc) i cp 10 ? 1 a(pulse) junction temperature tj 150 c storage temperature tstg ? 55~ + 150 c collector power dissipation p c 0.5 2sd2098 2sd2118 2sd2097 2 ? 2 1 10 w(tc = 25 c) 1 ? 3 w w ? 1 single pulse pw = 10ms ? 2 when mounted on a 40 40 0.7 mm ceramic board. ? 3 printed circuit board glass epoxy board, 1.6 mm thick with copper plating 100mm 2 or larger. ! ! ! ! electrical characteristics (ta=25 c) parameter symbol bv cbo bv ceo bv ebo i cbo i ebo h fe v ce(sat) f t cob min. 50 20 6 ? ? 120 ? ? ? ? ? ? ? ? ? 0.25 150 30 ? ? ? 0.5 0.5 390 1.0 ? ? vi c = 50 a i c = 1ma i e = 50 a v cb = 40v v eb = 5v v ce = 2v, i c = 0.5a v ce = 6v, i e =? 50ma, f = 100mhz i c /i b = 4a/0.1a v ce = 20v, i e = 0a, f = 1mhz v v a a ? v ? ? mhz pf typ. max. unit conditions ? measured using pulse current. collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current dc current transfer ratio collector-emitter saturation voltage output capacitance transition frequency ! ! ! ! packaging specifications and h fe package taping code 2sd2098 type t100 1000 h fe tl 2500 tv2 2500 2sd2118 2sd2097 qr qr qr basic ordering unit (pieces) ? ? ? ? ? ? h fe values are classified as follows : item h fe r 180~390 q 120~270
2sd2098 / 2sd2118 / 2sd2097 transistors ! ! ! ! electrical characteristic curves 1m 2m 5m 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 collector current : i c (a) base to emitter voltage : v be (v) fig.1 grounded emitter propagation characteristics v ce = 2v 25 c ? 25 c ta=100 c 0 1 2 3 4 5 0 0.4 0.8 1.2 1.6 2.0 ta = 25 c 5ma 10ma 15ma 20ma 25ma 30ma 35ma 40ma i b = 0ma 45ma 50ma collector current : i c (a) collector to emitter voltage : v ce (v) fig.2 grounded emitter output characteristics 1m 5 10 20 50 100 200 500 1000 2000 5000 2 m 5m 0.01 0.02 0.05 0.1 0.2 0 . 5 1 2 5 1 0 ta = 25 c 2v 1v v ce = 5v dc current gain : h fe collector current : i c (a) fig.3 dc current gain vs. collector current ( ) 1m 5 10 20 50 100 200 500 1000 2000 5000 2m 5m 0.010.02 0.05 0.10.2 0.5 1 2 5 10 v ce = 1v 25 c ? 25 c ta = 100 c dc current gain : h fe collector current : i c (a) fig.4 dc current gain vs. collector current ( ? ) 1m 5 10 20 50 100 200 500 1000 2000 5000 2 m 5 m 0.010.02 0.0 5 0.1 0.2 0.5 1 2 5 1 0 v ce = 2v 25 c ? 25 c ta = 100 c dc current gain : h fe collector current : i c (a) fig.5 dc current gain vs. collector current ( ?? ) 5 m 0.01 0.02 0.0 5 0 . 2 0 . 5 1 2m 2 1 0.5 0.2 0.1 0.05 0.02 0.01 2510 collector saturation voltage : v ce(sat) (v) collector current : i c (a) fig.6 collector-emitter saturation voltage vs. collector current ( ) ta = 25 c 0.1 i c /i b = 50 30 10 40 2 1 0.5 0.2 0.1 0.05 0.02 0.01 2 m 5 m 0.0 1 0.0 2 0.0 5 0.1 0.2 0.5 1 2 5 1 0 collector saturation voltage : v ce(sat) (v) collector current : i c (a) fig.7 collector-emitter saturation voltage vs. collector current ( ? ) l c /l b = 10 25 c ? 25 c ta = 100 c 2 1 0.5 0.2 0.1 0.05 0.02 0.01 2 m 5 m 0.01 0.02 0.0 5 0.1 0.2 0 . 5 1 2 5 1 0 collector saturation voltage : v ce(sat) (v) collector current : i c (a) fig.8 collector-emitter saturation voltage vs. collector current ( ?? ) l c /l b = 30 ta = 100 c 25 c ? 25 c 2 1 0.5 0.2 0.1 0.05 0.02 0.01 2 m 5 m 0.01 0.02 0.0 5 0.1 0.2 0.5 1 2 5 1 0 collector saturation voltage : v ce(sat) (v) collector current : i c (a) fig.9 collector-emitter saturation voltage vs. collector current (iv) l c /l b = 40 25 c ? 25 c ta = 100 c
2sd2098 / 2sd2118 / 2sd2097 transistors 2 1 0.5 0.2 0.1 0.05 0.02 0.01 2 m 5 m 0.01 0.02 0.0 5 0.1 0.2 0.5 1 2 5 1 0 collector saturation voltage : v ce(sat) (v) collector current : i c (a) fig.10 collector-emitter saturation voltage vs. collector current (v) l c /l b = 50 25 c ? 25 c ta = 100 c ? 1m ? 2m ? 5m ? 10m ? 20m ? 50m ? 0.1 ? 0.2 ? 0.5 ? 1 1000 500 200 50 20 100 10 2 5 1 ta = 25 c v ce = 6v emitter current : i e (a) transition frequency : f t (mhz) fig.11 gain bandwidth product vs. emitter current collector output capacitance : cob (pf) emitter input capacitance : cib (pf) collector to base voltage : v cb (v) emitter to base voltage : v eb (v) fig.12 collector output capacitance vs. collector-base voltage emitter input capacitance vs. emitter-base voltage 10 20 50 100 200 500 1000 0.1 0.2 0.5 1 2 5 10 20 50 ta = 25 c f = 1mhz i c = 0a i e = 0a cob cib pw = 1ms pw = 100 s ic max (pulse) dc ta = 25( c) single pulse recommended land pattern pw = 10ms pw = 100ms collector to emitter voltage : v ce (v) collector current : i c (a) 0.2 0.5 1 2 5 10 20 50 100 500 200 50 5 20 2 10 1 200m 100m 50m 20m 10m 500m fig.13 safe operating area (2sd2098) collector to emitter voltage : v ce (v) collector current : i c (a) 0.2 0.5 1 2 5 10 20 50 100 500 200 50 5 20 2 10 1 200m 100m 50m 20m 10m 500m fig.14 safe operating area (2sd2118) ic max (pulse) ic max (pulse) dc ta = 25 ( c) single pulse pw = 10ms pw = 100ms
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